| PART |
Description |
Maker |
| 2SD2219 |
NPN Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications
|
SANYO
|
| UPA610TA PA610TA D11199EJ1V0DS00 UPA610 |
Small signal MOSFET 6-pin MM -30V/0.1A, 2.5V drive
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
From old datasheet system
|
NEC
|
| RJK03E9DPA RJK03E9DPA-00-J5A |
30V, 35A, 4.3m max N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03M2DPA RJK03M2DPA-15 |
N Channel Power MOS FET High Speed Power Switching
30V, 45A, 2.8mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| UB3010 |
N-Ch 30V Fast Switching MOSFETs
N-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology
|
Unitpower Technology Limited
Unitpower Technology Li...
|
| FS3UM-18 FS3UM-18A FS4VS-12 FS20SM-6 FS40SM-6 FS3U |
HIGH-SPEED SWITCHING USE 高速开关使
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric, Corp.
Powerex Power Semiconductors
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SSM6N16FE |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
High Speed Switching Applications Analog Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1871 2SA1871-GA1-AZ |
PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING 进步党三重扩散硅晶体管高速高压开
1 A, 600 V, PNP, Si, POWER TRANSISTOR
High-speed high-voltage switching PNP 3-diffusion trans
|
NEC, Corp.
NXP Semiconductors N.V.
NEC[NEC]
|
| RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805
HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SB904 2SD1213 2SD1213R |
Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay 晶体管|晶体管|叩| 30V的五（巴西）总裁|甲一（c）|18VAR
30V/20A High-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
